1HN04CH-TL-W
Manufacturer : ON Semiconductor Packaging : Cut Tape (CT) Alternate Packaging Series : - Part Status : Active FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 270mA (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V Rds On (Max) @ Id, Vgs : 8 Ohm @ 140mA, 10V Vgs(th) (Max) @ Id : 2.6V @ 100µA Gate Charge (Qg) (Max) @ Vgs : 0.9nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 15pF @ 20V FET Feature : - Power Dissipation (Max) : - Operating Temperature : 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : 3-CPH Package / Case : TO-236-3, SC-59, SOT-23-3
1HP04CH-TL-W
Manufacturer : ON Semiconductor Packaging : Cut Tape (CT) Alternate Packaging Series : - Part Status : Active FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V Rds On (Max) @ Id, Vgs : 18 Ohm @ 80mA, 10V Vgs(th) (Max) @ Id : 2.6V @ 100µA Gate Charge (Qg) (Max) @ Vgs : 0.9nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 14pF @ 20V FET Feature : - Power Dissipation (Max) : - Operating Temperature : 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : 3-CPH Package / Case : TO-236-3, SC-59, SOT-23-3
2N6660
Manufacturer : Microchip Technology Packaging : Bulk Series : - Part Status : Active FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 410mA (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V Rds On (Max) @ Id, Vgs : 3 Ohm @ 1A, 10V Vgs(th) (Max) @ Id : 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 24V FET Feature : - Power Dissipation (Max) : 6.25W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-39 Package / Case : TO-205AD, TO-39-3 Metal Can
2N6660
Manufacturer : Vishay Siliconix Packaging : Tube Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 990mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V Rds On (Max) @ Id, Vgs : 3 Ohm @ 1A, 10V Vgs(th) (Max) @ Id : 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-205AD (TO-39) Package / Case : TO-205AD, TO-39-3 Metal Can
2N6660-2
Manufacturer : Vishay Siliconix Packaging : Tube Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 990mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V Rds On (Max) @ Id, Vgs : 3 Ohm @ 1A, 10V Vgs(th) (Max) @ Id : 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-205AD (TO-39) Package / Case : TO-205AD, TO-39-3 Metal Can
2N6660-E3
Manufacturer : Vishay Siliconix Packaging : Bulk Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 990mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V Rds On (Max) @ Id, Vgs : 3 Ohm @ 1A, 10V Vgs(th) (Max) @ Id : 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-205AD (TO-39) Package / Case : TO-205AD, TO-39-3 Metal Can
2N6660JTVP02
Manufacturer : Vishay Siliconix Packaging : Tube Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 990mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V Rds On (Max) @ Id, Vgs : 3 Ohm @ 1A, 10V Vgs(th) (Max) @ Id : 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-205AD (TO-39) Package / Case : TO-205AD, TO-39-3 Metal Can
2N6660JTX02
Manufacturer : Vishay Siliconix Packaging : Tube Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 990mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V Rds On (Max) @ Id, Vgs : 3 Ohm @ 1A, 10V Vgs(th) (Max) @ Id : 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-205AD (TO-39) Package / Case : TO-205AD, TO-39-3 Metal Can
2N6660JTXL02
Manufacturer : Vishay Siliconix Packaging : Tube Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 990mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V Rds On (Max) @ Id, Vgs : 3 Ohm @ 1A, 10V Vgs(th) (Max) @ Id : 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-205AD (TO-39) Package / Case : TO-205AD, TO-39-3 Metal Can
2N6660JTXP02
Manufacturer : Vishay Siliconix Packaging : Tube Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 990mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V Rds On (Max) @ Id, Vgs : 3 Ohm @ 1A, 10V Vgs(th) (Max) @ Id : 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-205AD (TO-39) Package / Case : TO-205AD, TO-39-3 Metal Can
2N6660JTXV02
Manufacturer : Vishay Siliconix Packaging : Tube Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 990mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V Rds On (Max) @ Id, Vgs : 3 Ohm @ 1A, 10V Vgs(th) (Max) @ Id : 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-205AD (TO-39) Package / Case : TO-205AD, TO-39-3 Metal Can
2N6661
Manufacturer : Vishay Siliconix Packaging : Tube Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 90V Current - Continuous Drain (Id) @ 25°C : 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V Vgs(th) (Max) @ Id : 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-39 Package / Case : TO-205AD, TO-39-3 Metal Can
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